epitaxy造句
1 I will discuss how Molecular Beam Epitaxy (MBE) was invented, its current status, and future developments.
2 The environmental morals have their intension, the epitaxy and main content.
3 Some double crystal rocking curves of photocathode epitaxy materials and substrates are measured by means of X-ray double crystal diffraction in the bonding process.
4 Since molecular beam epitaxy technique appeared, the research of semiconductor physics has gained many amazing break throughs.
5 Impurity doped during epitaxy will diffuse in the epitaxial layer and even into the substrate.
6 The morphologies of Si epitaxy thin films and carrier concentration hear its junction are observe and measured by means of SEM, X - ray, AES and C -V measurements.
7 Firstly, the theory and fabrication of molecular beam epitaxy are described in detail.
8 The Laser Molecular Beam Epitaxy (Laser MBE) is a new growth method of the films and the superlattices based on the conventional MBE and the pulsed Laser Deposition (PLD).
9 These devices are fabricated utilizing molecular beam epitaxy manufacturing techniques and feature rugged construction and consistent electrical performance.
10 Modified MBE techniques ate presented such as migration-enhanced epitaxy(MEE), interval growth and temperature switch.
11 High quality GaN film was grown by hydride vapor phase epitaxy ( HVPE ) using porous AAO as mask.
12 The main factors affecting the quality of semiconductor heterostructure epitaxy chips, inspection methods and some typical test results have beeen introduced in this pater.
13 To satisfy the requirement for high performance infrared detector, a selective epitaxy Schottky barrier diode of SiGe was realized based on high quality silicon device.
14 Riber is a world leading supplier of MBE (Molecular Beam Epitaxy) products and services to the compound semiconductor community.
15 The design and technical points of a molecular beam epitaxy apparatus with metal-organic source were described.
16 In this paper is reported the design and the settlement of an experimental simulation system of molecular beam epitaxy applied to physics researches.
17 BaTiO 3 ( BTO ) ferroelectric thin films were deposited directly on Si ( 100 ) single crystal substrates with laser molecular beam epitaxy ( LMBE ).
18 We review the self-assembly of functional molecules on metal substrates based on density functional theory using ab initio calculations and ultrahigh vacuum molecular beam epitaxy technique.
19 The paper is a review of technique and recent progress made in organic thin films grown in ultrahigh vacuum by organic molecular beam epitaxy techniques.
20 Based on the conception of RTD/HEMT series connection resonant tunneling transistors, an RTD/HEMT monolithic integration material structure was designed and grown by molecular beam epitaxy.
21 Perovskite oxide th in films and heterojunctions have been fabricated by laser molecular beam epitaxy controlled in atomic scale.
22 GaAs - Al _ xGa _ ( 1 - x ) As heterostructure grown by liquid phase epitaxy ( LPE ) has beenstudied by Auger electron spectroscope.
23 The higher value is comparable to those obtained in CVD epitaxy.
24 In this dissertation, we studied the growth of Sb-containing compound semiconductor materials and devices by using solid source molecular beam epitaxy (SSMBE).
25 May 5, 2008...BCC Research has released a report about the markets for chemical vapor deposition (CVD), ion implantation, and molecular beam epitaxy (MBE).
26 The crystal growth by glow discharge sputterings and ion beam sputterings and thecrystal epitaxy are introduced.
27 Epitaxial deposition is then used to form an epitaxial layer on the epitaxy surface.