CMOS造句
91. An ESD protection circuit for IC cards is described, which is based on CMOS process.
92. It is important to note that the cost of off-chip inductors is mitigated by the removal of the large area on-chip passive inductors from the expensive submicron CMOS die area.
93. The design has been used in the data transmission of CMOS image sensor and has passed the FPGA prototype verification correctly.
94. Single-chip 16-bit CMOS microcomputer. ROM 16K bytes, RAM 512 bytes. External clock input frequency 16 MHz.
95. Based on the interference of diffraction grating and the technology of CMOS linear image sensor, the refraction index of transparent materials is measured automatically.
96. At present, leading-edge chip makers are using conventional bulk CMOS and planar transistor structures for the 32-/28-nm nodes.
97. The power leakage principle of CMOS device is introduced, which is in direct portion to Hamming distance processed in gate.
98. Through analyzing its work principle, we find the method to raise the speed: use a novel CMOS dynamic D flip-flop and an improved synchronous frequency divider.
99. A wide-band CMOS low-noise amplifier(LNA) is presented, in which the input MOSFET thermal noise is canceled by exploiting a noise-canceling technique.
100. Design - For - Testability, DFT has become a very important part of the CMOS chip and system design.
101. In this paper, the spectral function is realized by using bidirectional current-mode CMOS circuits, and it provides a new technique method for the design of digital circuits.
102. The powerof instrument is reduced greatly because of the CMOS chip being used.
103. To verify the model, a test circuit has been designed to simulate parasitical latch-up paths in CMOS devices and relevant parameters are reported.
104. However, as the design rule continuously shrank down beyond the 45 nm , conventional planar CMOS devices encounter significant challenges.
105. FPGAs rely on the ubiquitous transistor - based technology called complementary metal oxide semiconductor ( CMOS ).
106. A CMOS device with polysilicon protection tiles is shown in Figure 2.
107. We propose a new subdivision technique directly subdividing the grating stripe by using complementary metal-oxide semiconductor (CMOS) microscopic imaging system combined with image processing.
108. Hex D flip-flop with common clock and reset. High-performance silicon-gate CMOS.
109. When trying to explain the latch-up window phenomena in CMOS devices induced by radiation, the so called "three-path" latch-up window model is provided.
110. A timing circuit is designed to reduce the effect of digital noise on analog signal in CMOS image sensor(CIS).
111. In the part of OSC, the CMOS chip prevents EMI by using frequency jitter technique.
112. Through a flip-flop, monostable or amplifying circuit composed of a CMOS element, the electromotive force controls the on and off, the delaying or the instantaneous on and off of the load.
113. This Schmitt trigger circuit can be suited to the deep sub-micron CMOS process and used to get rid of the noise on the input pad of the chip.
114. The optical system of the micro digital sun sensor consists of APS CMOS image sensor and MEMS based diaphragm with pinhole array structure.
115. The synthesis technique for multivalued CMOS circuits based on transmission function theory is discussed.
116. Guided by the switch-signal theory, this paper introduced design theory suitable for current-mode CMOS circuits at switch level.
117. Pulse Width Decoder-A Flxxible Application of Integrated Analog Switch CMOS.
118. Camera sources today are overwhelmingly based on either charge-coupled device ( CCD ) or CMOS technology.
119. The prepared CMOS image sensor meets the requirement for technological parameters of devices, has high fill factor and effectively improves the image quality of the CMOS image sensor.
120. High speed , high gain CMOS operational amplifier ( OP ) is treated in this thesis.
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