bipolar transistor造句
1. A bipolar transistor and its fabrication are described.
2. Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.
3. I-V characteristics of the heterojunction bipolar transistor(HBT) are presented to account for self-heating effect of RF power HBT's.
4. In a bipolar transistor , the control area or the electrical connection to the control area.
5. The ionizing radiation responses of NPN bipolar transistor and NMOSFET at different dose-rates have been investigated.
6. Transistor , also known as semiconductor transistor or bipolar transistor.
7. The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
8. Insulated gate bipolar transistor. N-channel enhancement mode, high speed switch.
9. This paper discusses the working principle of bipolar transistor avalanche, and analyzes the circuit of ultra-wideband very narrow pulse generator adopting cascade bipolar transistor structure.
10. An insulated gate bipolar transistor (IGBT) device characterization tool allows users to quickly and accurately create average and dynamic models of power semiconductor devices.
11. The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
12. Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
13. Using both pure poly emitter and heavily doped base, a CMOS-compatible silicon bipolar transistor is implemented, which has low base resistance and is suitable for low temperature operation.
14. Low running costs with a high operating efficiency. SENDON GENIUS UPS uses IGBT(insulated gate bipolar transistor) technology in the inverter to achieve its high efficiency...
15. An improved plan of silicon controlled rectifier(SCR)line type trigger is described in detail. Anew practical circuit of bipolar transistor trigger for high pulse repeat frequency is presented.
16. In this paper a new equivalent circuit model is constructed within a multi-MOS model for simulation of IGBT (Insulated Gate Bipolar Transistor) current sensors.
17. A first embodiment of the present invention includes an NMOS transistor, a PMOS transistor, and a bipolar transistor formed on different areas of the substrate.
18. In the brushless model, the IGBT ( Isolated Gate Bipolar Transistor ) switch state period table is gained by GAL ( Generic Array Logic ) which analyzes the signal of position feed-back.
19. A method to simulate the characteristics of insulated gate bipolar transistor(IGBT) with PSPICE program is proposed in this paper.
20. The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
21. This paper presents a novel hybrid circuit breaker (HCB) device whose motion part is composed of Insulated Gate Bipolar Transistor (IGBT) and Mechanical Circuit Breaker (MCB).
22. Mixing - signal stimulation method can enhance dissipation of bipolar transistor evidently , especially first cascade amplifying circuits.
23. To replace Q1 with a different power-switching device, such as an NPN bipolar transistor or a relay, specify Q2 to provide the control current that the switching device requires.
24. Open the supply through all - digital control loop of insulated gate bipolar transistor - based devices to be completed.
25. Phase-shifted FB-ZVZCS-PWM converter solves the problem mentioned above, and insulated gate bipolar transistor(IGBT) is fit for the lag-arm.
26. An assistant 380V AC-input and multi-output switching power supply is introduced which is used in thick-film driving circuits for large-power IGBT(Insulated Gate Bipolar Transistor).
27. The problem of closed-loop stability of logarithmic converters employing a bipolar transistor as logarithmic feedback element is discussed.
28. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor. As a result,[.com] electric field profile of n drift in LDMOS at on state is obtained.
29. To enlarge output power of power electronic system based on Insulated Gate Bipolar Transistor(IGBT), a number of IGBT modules or power electronic circuits can be paralleled.
30. The reason of appearing peak voltage in IGBT(insulated gate bipolar transistor)absorber is discussed. Absorbers corrcsponding to different powers are proposed for the 3rd generation IGBT.
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