bipolar transistor造句
31. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
32. Pulse width modulated (PWM) inverter can generate common-mode voltage, which can produce charge-discharge current at the distant of every insulated gate bipolar transistor (IGBT) high-speed switching.
33. Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
34. T equivalent high frequency heterojunction bipolar transistor (HBT) noise model is reported.
35. This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
36. The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
37. A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
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