MOS造句31) The voltage lifting device controls grid electrodes of the first MOS transistor and the second MOS transistor.
32) N-channel enhancement MOS silicon FET, very high-speed switching, analog switch application.
33) It is found that after irradiation the mobile ion area density is reduced for MOS capacitors oxidized both with dry oxygen and TCE and with dry oxygen only.
34) By this concept, we design a photo MOS transistor which can be turn on only by illumination instead applying voltage on gate.
35) The bulk potential modulator can realize real-time modulation to parameters of the target MOS device, thus greatly weakening the influence of technological deviation.
36) Finally, the operation precision of the device is analyzed, the conclusion that the parasitical capacitor of the MOS transistor is the main factor to affect the precision is obtained.
37) Self-heating effect and channel length modulation exist in high voltage MOS devices, due to their special and complex structure.
38) Using HV single poly single metal(SPSM) CMOS DMOS(CD) technology developed by us, we experiment on a 1000V 3-phase power MOS gate driver circuit with C level shift structure successfully./MOS.html
39) The characteristic of multi-input is convenient to the design of the filter. The structure is simple and compatible to MOS technology.
40) An unified method for converting MOS circuit level description into logic level description is presented.
41) A novel configuration of a MOS varactor is designed for good linearity of Kvco, as well as a new digital capacitor controlled array topology with lower parasitic capacitance and lower Ron.
42) Throughtuning the grid-voltage of MOS transistor, we can tune the equivalent resistance, accordingly tuning the cut-off frequency of the filter.
43) One such outpost was Fort Tusken , northwest of Mos Eisley.
44) An effective way to reduce the leakage power is by means of multithreshold CMOS technique, which can restrain the leakage current by adding a MOS transistor to low threshold circuit.
45) First, increasing demands for processing speed and functional density have pushed IC fabricators to shrink further the minimum dimensions of MOS devices.
46) The factors of MOS transistor in the saturation region are analyzed, the mismatch models are optimized, and the model parameter extraction is done by least squares curve fitting method.
47) Adopting LDD structure. 3. Properly increasing the channel length of MOS devices in admitted scope.
48) The object of the invention is to obtain a semiconductor storage which operates stably and can be produced by an MOS process.
49) A low - voltage ferrite driver IC with power MOS transistors is presented.
50) With the decrease of the MOS devices size , hot carrier effect failure get more and more heavy, it become one of the main failure mechanisms.
51) Then a novel multi-valued flip- flop is designed based on the improved clock-controlled neuron MOS transistor.
52) A new method of measuring the electromotive force of reversible cells using MOS intergrated circuit is presented.
53) In an MOS dynamic shift register the above problem is solved by keeping data in continuous motion.
54) By use of MOS image sensor developed by ChongqingUniversity and microcomputer data processing, a feasible method for laser accurate micrometry is presented in this paper.
55) The Monthly Operational Summary (MOS) reports on the status of projects in the Bank's lending pipeline: from the point of identification of the project to the signing of the loan or credit agreement.
56) New realization of neural networks is presented by using MOS transistors in current mode domain.
57) The gate voltage, at which the barrier height has its maximum, just corresponds to the threshold voltage of a MOS structure with zero electro-de gap.
58) Most methods in [ computational chemistry ] today start by calculating the MOs of the system.
59) It has insulated gate MOS devices and the ability to quickly switch.
60) Support the drill bit & MOS team on other production duties.