transistor造句
271. FPGAs rely on the ubiquitous transistor - based technology called complementary metal oxide semiconductor ( CMOS ).
272. PHEMT transistor ( ATF - 35143 ) is used in this design.
273. Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET) .
274. We work with a completely new transistor concept, in which a carbon nanotube or a single organic molecule takes the place of the traditional semi-conductor transistor.
275. This paper has designed a inverter power supply of volume 2KVA, working frequency 20KHZ. , based on that has analyzed the characteristic of IGBT (Insulated Gate Bipolar Transistor).
276. The principle of PAM PWM compound control and the power transistor AC adjustable speed system based on that principle are presented in this paper.
277. In this paper, the design of a low noise microwave transistor amplifier at 10cm-band is described.
278. Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera.
279. The paper describes a silent voltage source PWM frequency converter. Its main circuit uses novel full controlled devices bipolar static induction transistor(BSIT) and static induction thyristor(SITH).
280. Especially, the circuit of NAND gate my be totally made by NPN transistor, and the circuit structure is simple, easily is complicated by Integrate Circuit.
281. Within the last few decades, the electron tube has been largely replaced by the transistor.
282. To create nanoscale transistor junctions, engineers can crisscross different types of semiconducting strands, thereby stacking the materials in layers crucial for manipulating electron flow.
283. The gate of the field effect transistor is connected to the drain of field effect transistor.
284. This article has analysed the active filterable electric circuit in principle and shown you another one consisted of compound transistor with better effect of filtration.
285. In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
286. Threshold voltage window is approx 17V, and this transistor has nondestructive readout characteristic.
287. A transistor has three electrodes, the emitter, the base and the collector.
288. Both the fundamental properties and switching properties of compound switching transistor are discussed. The experimental test data and the practical examples of the application circuit are provided.
289. The article introduced the principle and apply of the transistor avalanche through four example of transistor oscillator, avalanche oscillator, audio signal generator, flash metronome.
290. Brattain:American physicist. He shared a 1956 Nobel Prize for developing the electronic transistor.
291. The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.
292. The auto Die Bonder for SOT - 23 transistor is a high - speed , high - precision, machinery electronics integrated equipment.
293. A design of boost converter using high-power insulated bipolar transistor IGBT module named SKM75GAL123D and driver module named EXB840 is introduced.
294. Back then Egyptians were lucky to own a transistor radio. Now two-thirds of homes have a satellite receiver, 87% own a fridge, 97% have piped water and 99% have electricity.
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