transistor造句
211. Based on logic gates of complementary single-electron transistor (SET), three units are proposed as follows: full adder, shift register and ROM.
212. N - channel enhancement mode vertical D - MOS transistor.
213. Switching time of the new type transistor is shortened 3 times.
214. The new bipolar junction field effect transistor(BJFET)has the features of both bipolar and junction field effect devices.
215. Die Triode nennt man auch den Transistor , einschlie & szlig ; lich PNP und NPN.
216. A conventional MOS transistor is modified to an accumulation - mode MOS varactor.
217. It will be a valuable reference to microwave pulse power transistor design.
218. One of the first terminal and the second terminal of the storage element is electrically connected to the unipolar transistor.
219. In this paper , the failure analysis of a type of high frequency power transistor is introduced .
220. There are two kinds of supply modes of collecting electrode resistance(inner and outer)in the voltage-steadied circuit of series connection transistor.
221. Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
222. Bipolar junction transistor(BJT)has the self-heating phenomena, which seriously affects the properties of transistor.
223. The positive - going signal subtracts from the forward bias of the lower transistor.
224. The system adopted insulated gate bipolar transistor (IGBT) as its main circuit and pulse-width modulating (PWM) technology.
225. A memory cell structure for a memory device is provided, the memory cell structure comprising a read transistor having a floating gate node, a tunnelling capacitor, and a coupling capacitor stack.
226. The characteristics, basic circuit, and working wave pattern of transistor type optical coupler and its function in electronic control unit of hydraulic discharging machine were introduced.
227. Invention of the point contact transistor by Brattain and Bardeen. ( December 23 ).
227.try its best to gather and build good sentences.
228. Provided is an insulated gate bipolar transistor (IGBT) which occupies a small area and in which a thermal breakdown is suppressed.
229. If you use a dual supply, the transistor has the additional voltage swing below ground potential to keep it in its active region and does not cut off.
230. The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
231. Bipolar or conventional transistors are used in manufacturing transistor - transistor logic ( TTL ) and emitter - coupled logic ( ECL ) devices.
232. Three transistor dynamic cells and buffered I/O control logic are used for the device. The control circuit is optimized for Y C separation system.
233. The neuron MOS transistor is a recently invented device with high functionality.
234. The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
235. The method is worked out to determine the Boltzmann constant accurately with the aid of the I-V characteristic of the transistor diode.
236. The objective of this design is to a broadband microwave power transistor used in broadband solid state amplifier.
237. The model considers the drift velocity saturation of carriers and influence of parasitic bipolar transistor.
238. A convenient modulator can be formed by an emitter-follower transistor having its emitter region connected to the source or drain of the field-effect transistor.
239. This make of transistor radio is small and beautifully designed.
240. A transistor needs to be completely semiconducting to hold information, Tour says.
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