transistor造句
121. Moreover, the collector of switching transistor is also connected to an output end of PG signal directly. The emitter is also connected to an input end of a control signal directly.
122. And when the mixture is used for semiconducting, as in a transistor, the excess current from the conducting nanotubes will short the device.
123. The invention discloses a method for manufacturing a complementary metal oxide semiconductor ( CMOS ) transistor.
124. One of the important research directions is the fabrication of nano electrical devices including transistor and sensor by bottom-up method using carbon nanotubes as building block.
125. In the test of breakdown voltage of power transistor with SIPOS passivation layer before packaging, an abnormal curve of breakdown voltage was found, which was a double-line breakdown voltage curve.
126. 50 years ago, the first Chinese made alloy junction Germanium PNP transistor was born in the Semiconductor Laboratory of the Institute of Applied Physics, Beijing.
127. It is an improvement with comparison to the unvaried transistor voltage regulators.
128. To replace Q1 with a different power-switching device, such as an NPN bipolar transistor or a relay, specify Q2 to provide the control current that the switching device requires.
129. When the voltage across the cap exceeds the reference voltage, the comparator momentarily triggers the transistor which shorts out the cap, discharging it back to the starting voltage.
130. Note: P1.0 port by the MCU output audio signal, the P1.0 port access transistor to drive the speakers, the best form with two Darlington transistor structure.
131. The transistor meant more powerful, more reliable, and less expensive computers that would occupy less space and give off less heat than did vacuum-tube-powered computers.
132. There are two kinds of supply modes of collecting electrode resistance (inner and outer) in the voltage-steadied circuit in which series connection transistor is used.
133. Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
134. The fine structure and the thin-film transistor can be integrated on the one insulating surface in one step.
135. The signal generation circuit includes a NPN typed switching transistor. Through a first resistance, base electrode of the switching transistor is connected to a first system power source.
136. You can use a cheap NPN transistor such as a 2N2222 to amplify this pulse, to interface with the next stage of electronics. You can also add divider ICs.
137. Transistor: Solid-state semiconductor device for amplifying, controlling, and generating electrical signals. Invented at Bell Labs (1947) by John Bardeen, Walter H. Brattain, and William B.
138. Figure 1-14 shows an NPN transistor and a PNP transistor in the feedback path to provide dual polarity operation.
139. A method for measuring and controlling the junction temperature of power transistor during succession operation life test is proposed.
140. A component whose operation depends on the control of electric or magnetic phenomena in solids, ?e. g. , ? a transistor, crystal diode, ferrite core.
141. For those of you without advanced physics degrees, what that means is that you can use water in conjunction with graphene to create an on-off switch, a transistor..
142. Transistor , also known as semiconductor transistor or bipolar transistor.
143. The main product is switching diode series, zener diode series, transistor series.
144. A semiconductor device may include at least one metal oxide field-effect transistor (MOSFET).
145. This method is able to make the analysis and calculation of the transistor amplifier circuit tend to be simplified.
146. The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
147. We are using this transistor to amplify a telephone signal.
148. The concepts described above are embodied in the junction transistor.
149. The high speed insulated gate bipolar transistor(IGBT) transport model is derived by ambipolar transport theory in this paper.
150. Combining with old transistor curve grapher, using single chip computer and serial port communication, the transistor characteristic curves is displayed on the microcomputer.
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